Status: Discontinued | Datasheet: Request Data Sheet   | RoHS Compliance:
The RF3931 is a 48V 30W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical, and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency and flat gain over a broad frequency range in a single amplifier design. The RF3931 is an unmatched GaN transistor packaged in a hermetic, flanged ceramic package. This package provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of simple, optimized matching networks external to the package that provide wideband gain and power performance in a single amplifier.

Features:
  • Broadband Operation DC to 3.5GHz
  • Advanced GaN HEMT Technology
  • Advanced Heat-Sink Technology
  • Gain = 15dB at 2GHz
  • 48V Operation Typical  Performance at 900MHz 
    • Output Power 50W
    • Drain Efficiency 65%
    • -40°C to 85°C Operation
  • Part Number:
    RF3931
    Manufacturer:
    Qorvo
    Frequency Min:
    0 GHz
    Frequency Max:
    3 GHz
    Output Power:
    30 W
    Gain:
    15 dB
    % Typ Efficiency:
    65
    Supply Voltage:
    48 V
    Id:
    130 mA
    Package:
    Flange
    Process:
    GaN
    Type:
    RF Power Discrete Transistors
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