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RFHA1043

Model Number: RFHA1043

RF Power Transistor from Qorvo

RF Power Transistor, 1.2 to 1.85 GHz, 150W, 13.6 dB, 48 V, Flange, GaN

Status: Discontinued | Datasheet: Request Data Sheet | RoHS Compliance: Rohs Compliant

The RFHA1043 is optimized for applications in the 1.2GHz to 1.85GHz frequency band. Using an advanced 48V high power density gallium nitride (GaN) semiconductor process optimized for high peak to average ratio applications, these high-performance amplifiers achieve high efficiency and flat gain over a broad frequency range in a single amplifier design. The RFHA1043 is an input matched GaN transistor packaged in an air cavity ceramic package, which provides excellent thermal stability. Ease of integration is accomplished through the incorporation of simple optimized matching networks external to the package that provide wideband gain, efficiency, and linearizable performance in a single amplifier.

Part Number: RFHA1043
Manufacturer: Qorvo
Frequency Min: 1.2 GHz
Frequency Max: 1.85 GHz
Output Power: 150 W
Gain: 13.6 dB
% Typ Efficiency: 60
Supply Voltage: 48 V
Id: 600 mA
Package: Flange
Process: GaN
Type: RF Power Discrete Transistors

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Product Specifications For RFHA1043 RF Power Transistor

Part Number: RFHA1043 Manufacturer: Qorvo Product Description: RF Power Transistor, 1.2 to 1.85 GHz, 150W, 13.6 dB, 48 V, Flange, GaN

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RFHA1043

RF Power Transistor from Qorvo

RF Power Transistor, 1.2 to 1.85 GHz, 150W, 13.6 dB, 48 V, Flange, GaN

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RFHA1043

RF Power Transistor from Qorvo

RF Power Transistor, 1.2 to 1.85 GHz, 150W, 13.6 dB, 48 V, Flange, GaN

Technical Inquiry Request for RFHA1043 RF Power Transistor

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