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RFHA1101D

Model Number: RFHA1101D

RF Power Transistor from Qorvo

RF Power Transistor Die, DC- 10 GHz, 36.3 dBm, 21.4 dB, GaN ON SiC, DIE

Status: Discontinued | Data Sheet:

| RoHS Compliance: Rohs Compliant

The RFHA1101D is a 28V, 4.3W, GaN on SiC high power discrete amplifier die designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical, and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, the RFHA1101D is able to achieve high efficiency and flat gain over a broad frequency range in a single amplifier design with proper heat sinking and assembly. The RFHA1101D is an unmatched 0.5μm gate, GaN transistor die suitable for many applications with >36dBm 3dB-compressed power, >60% 3dB-compressed drain efficiency, and >21dB small signal gain at 2GHz.

Features:

Broadband Operation DC to 10GHz

Advanced GaN HEMT Technology

Small Signal Gain=21.4dB at 2.14GHz

28V Typical Performance

Output Power 4.3W at P3dB
Drain Efficiency 60% at P3dB

Part Number: RFHA1101D
Manufacturer: Qorvo
Type: RF Power Discrete Transistors

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Product Specifications For RFHA1101D RF Power Transistor

Part Number: RFHA1101D Manufacturer: Qorvo Product Description: RF Power Transistor Die, DC- 10 GHz, 36.3 dBm, 21.4 dB, GaN ON SiC, DIE

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RFHA1101D

RF Power Transistor from Qorvo

RF Power Transistor Die, DC- 10 GHz, 36.3 dBm, 21.4 dB, GaN ON SiC, DIE

Technical Inquiry Request for RFHA1101D RF Power Transistor

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RFHA1101D

RF Power Transistor from Qorvo

RF Power Transistor Die, DC- 10 GHz, 36.3 dBm, 21.4 dB, GaN ON SiC, DIE

Technical Inquiry Request for RFHA1101D RF Power Transistor

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