Part number SSPA 0.020-1.000-350 Product Type Amplifier from Manufacturer Aethercomm, Inc.

Status: Standard | Data Sheet: pdf link image   | RoHS Compliance:

Aethercomm Model Number SSPA 0.020-1.000-350 is a high power, multi-decade bandwidth, GaN solid state power amplifier. It is packaged in an enclosure that is optimized for airborne or ground applications that require survival in high performance shock and vibration environments. Nominal linear output power is 100-200 watts but power levels at saturation of 300-400 watts are typical from 100-900 MHz. Depending on the ap-plication, output power can be backed off to achieve excellent EVM metrics. This GaN broad-band SSPA can be employed in high performance systems where high power, excellent efficiency and high linearity are required across a large fre-quency spectrum. Typical power gain is 53 to 57 dB. A nominal 0 dBm input drive is required to achieve saturated output power. The composite power added efficiency with a CW input is be-tween 40-50% at room temperature from 50-1000 MHz. Input and output VSWR is 2.0:1 maxi-mum. This SSPA can be blanked on and off in 10uSec maximum. Standard features include re-verse polarity protection, output short and open circuit protection, and over/under voltage protec-tion. In band harmonics are -17 dBc typical. Noise figure is 10 dB maximum. This power amplifier module operates from -40°C to +75°C base plate temperature. The thermal management system calls for this assembly to be mounted to a heat sink for conduction cooling.This high power SSPA is employed in high shock and vibration environments. It is designed and tested to withstand MIL-STD-810 shock and vibration requirements. The housing volume is approximately 6.3” (W) x 12.8” (L) x 1.8” (H) and weighs 10.0 lbs. maximum. DC and logic connec-tions are accessible via a single 9W4 DSUB con-nector. The RF input connector is an SMA female. The RF output connector is a type TNC female.

Part Number:
SSPA 0.020-1.000-350
Manufacturer:
Aethercomm, Inc.
Type:
RF Connectorized Power Amplifier
Frequency Min:
0.02 GHz
Frequency Max:
1 GHz
P1dB:
55 dBm
Gain:
53 dB
Supply Voltage \ Vd Max:
50 V
Process:
GaN
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