Part number SSPA 0.2-2.5-200 Product Type Amplifier from Manufacturer Aethercomm, Inc.

Status: Discontinued | Datasheet: Request Data Sheet   | RoHS Compliance:

Aethercomm Model Number SSPA 0.2-2.5-200 is a high power, decade plus bandwidth, GaN solid state power amplifier. This amplifier continuously covers the full band of 200 MHz to 2500 MHz. It can be commanded on and off in 10 uSecs maxi-mum to control DC power consumption and to gate the RF drive signal. The output power is 200 watts typical at PSat across the band at room temperature. This GaN broadband SSPA is de-signed to be employed in any system where high power, high efficiency and high linearity are re-quired across a large frequency spectrum. Nomi-nal input drive for full rated Pout is 0 dBm. Small signal gain is ~60 dB. The composite power added efficiency with a CW input is between 35-50% at room temperature with better PAE towards the lower end of the band. Input VSWR is 2.0:1 maxi-mum. The input voltage is +50 Vdc. Standard fea-tures include reverse polarity protection, output short and open circuit protection, and over/under voltage protection. All functionality is controlled via external discrete signals applied to the DSUB. Please consult factory regarding the SCD for spe-cifics. Temperature is monitored and reported by this module. This power amplifier module oper-ates from –40°C to +85°C base plate tempera-ture. The amplifier will need to be cooled via con-duction to a heat sink.
This module is designed and tested to withstand MIL-STD-810 high shock and vibration require-ments. DC and logic connections are accessible via a DSUB connector. The RF input connector is SMA female. The RF output connector is Type N female.

Part Number:
SSPA 0.2-2.5-200
Manufacturer:
Aethercomm, Inc.
Type:
RF Connectorized Power Amplifier
Frequency Min:
0.2 GHz
Frequency Max:
2.5 GHz
Psat:
53 dBm
Gain:
60 dB
Supply Voltage \ Vd Min:
48 V
Supply Voltage \ Vd Max:
52 V
Process:
GaN
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