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T1G4003532-FL

Model Number: T1G4003532-FL

RF Power Transistor from Qorvo

RF Power Transistor, DC to 3.5 GHz, 35 W, 16 dB, 32 V, GaN

Status: Discontinued | Datasheet: Request Data Sheet | RoHS Compliance: Rohs Compliant

35W, 32V, DC-3.5GHz GaN RF Power Transistor

The TriQuint T1G4003532-FL is a 35 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device is constructed with TriQuint's proven 0.25 um process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

Part Number: T1G4003532-FL
Manufacturer: Qorvo
Frequency Min: 0 GHz
Frequency Max: 3.5 GHz
Output Power: 35 W
Gain: 16 dB
% Typ Efficiency: 54
Supply Voltage: 32 V
Id: 150 mA
Package: Flange
Process: GaN
Type: RF Power Discrete Transistors

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Part Function	Part Number	Description
Replacement	T2G4003532-FL Qorvo	RF Power Transistor, DC to 3.5 GHz, 35 W, 16 dB, 32 V, GaN

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Product Specifications For T1G4003532-FL RF Power Transistor

Part Number: T1G4003532-FL Manufacturer: Qorvo Product Description: RF Power Transistor, DC to 3.5 GHz, 35 W, 16 dB, 32 V, GaN

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Description	Units Per Format	Available

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T1G4003532-FL

RF Power Transistor from Qorvo

RF Power Transistor, DC to 3.5 GHz, 35 W, 16 dB, 32 V, GaN

Technical Inquiry Request for T1G4003532-FL RF Power Transistor

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T1G4003532-FL

RF Power Transistor from Qorvo

RF Power Transistor, DC to 3.5 GHz, 35 W, 16 dB, 32 V, GaN

Technical Inquiry Request for T1G4003532-FL RF Power Transistor

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