Qorvo's T1G4020036-FL is a 2 x 200 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 3.5 GHz and a 50V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations.
Lead-free and ROHS compliant
Evaluation boards are available upon request.
Part Number:
T1G4020036-FL
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Manufacturer:
Qorvo
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Export Status:
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Frequency Min:
0 GHz
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Frequency Max:
3.5 GHz
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Output Power:
260 W
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Gain:
16 dB
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Supply Voltage:
36 V
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Id:
520 mA
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Process:
GaN
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Type:
RF Power Discrete Transistors
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Modelithics Simulation Model
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HMT-QOR-T1G4020036-FL-001 HMT-QOR-T1G4020036-FL-001 |
Description | Units Per Format | Available |
Description | Units Per Format | Available |