Part number T1G4020036-FL Product Type RF Power Transistor from Manufacturer Qorvo

Status: Standard | Data Sheet: pdf link image   | RoHS Compliance: Rohs Compliant

Qorvo's T1G4020036-FL is a 2 x 200 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 3.5 GHz and a 50V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations.

Lead-free and ROHS compliant

Evaluation boards are available upon request.

Part Number:
T1G4020036-FL
Manufacturer:
Qorvo
Export Status:
Frequency Min:
0 GHz
Frequency Max:
3.5 GHz
Output Power:
260 W
Gain:
16 dB
Supply Voltage:
36 V
Id:
520 mA
Process:
GaN
Type:
RF Power Discrete Transistors

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Product Specifications For T1G4020036-FL RF Power Transistor
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Availability
In Stock
24
On Order
25
by 10/8/2025

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