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T1G4020036-FS

Model Number: T1G4020036-FS

RF Power Transistor from Qorvo

RF Power Transistor, DC to 3.5 GHz, 260 W, 16 dB, 36V, GaN

Status: Standard | Data Sheet:

| RoHS Compliance: Rohs Compliant

The TriQuint T1G4020036-FS is a 240 W Peak (48 W Avg.) (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device is constructed with TriQuint's proven TQGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

Lead-free and ROHS compliant

Part Number: T1G4020036-FS
Manufacturer: Qorvo
Export Status:
Frequency Min: 0 GHz
Frequency Max: 3.5 GHz
Output Power: 260 W
Gain: 16 dB
Supply Voltage: 36 V
Id: 520 mA
Process: GaN
Type: RF Power Discrete Transistors

Modelithics Simulation Model

HMT-QOR-T1G4020036-FS-001

Part Function	Part Number	Description
Evaluation Board	T1G4020036-FL-EVB1 Qorvo	Evaluation board for T1G4020036-FL
Complementary Product	200X02R0 XSYSTOR Inc.	GaN Controller Module, 80 V Max, 300 mA Drive Current, 60 nS Rise Time, -2.0 V Shutdown Voltage
Complementary Product	765EP2R0 XSYSTOR Inc.	Evaluation Board
Complementary Product	T1G4020036-FL Qorvo	RF Power Transistor, DC to 3.5 GHz, 260 W, 16 dB, 36V, GaN

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Product Specifications For T1G4020036-FS RF Power Transistor

Part Number: T1G4020036-FS Manufacturer: Qorvo Product Description: RF Power Transistor, DC to 3.5 GHz, 260 W, 16 dB, 36V, GaN

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by 10/31/2025

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$1232.10

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Description	Units Per Format	Available

Description	Units Per Format	Available

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T1G4020036-FS

RF Power Transistor from Qorvo

RF Power Transistor, DC to 3.5 GHz, 260 W, 16 dB, 36V, GaN

Technical Inquiry Request for T1G4020036-FS RF Power Transistor

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T1G4020036-FS

RF Power Transistor from Qorvo

RF Power Transistor, DC to 3.5 GHz, 260 W, 16 dB, 36V, GaN

Technical Inquiry Request for T1G4020036-FS RF Power Transistor

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