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T2G6000528-Q3

Model Number: T2G6000528-Q3

RF Power Transistor from Qorvo

RF Power Transistor, DC to 6 GHz, 10W, 13.5 dB, 28 V, GaN

Status: Standard | Data Sheet:

| RoHS Compliance: Rohs Compliant

Qorvo's T2G6000528-Q3 is a 10 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz and a 28V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations.

Lead-free and ROHS compliant

Evaluation boards are available upon request.

Part Number: T2G6000528-Q3
Manufacturer: Qorvo
Process: GaN
Type: RF Power Discrete Transistors

Modelithics Simulation Model

HMT-QOR-T2G6000528-Q3-001

Part Function	Part Number	Description
Evaluation Board	T2G6000528Q3EVB03 Qorvo	Evaluation board for T1G6000528-Q3
Complementary Product	200X02R0 XSYSTOR Inc.	GaN Controller Module, 80 V Max, 300 mA Drive Current, 60 nS Rise Time, -2.0 V Shutdown Voltage
Complementary Product	620EP2R0AL20 XSYSTOR Inc.	Evaluation Board, Controller, Switch
Complementary Product	735E22R0 XSYSTOR Inc.	Evaluation Board, Controller, Switch
Complementary Product	795EP2R0 XSYSTOR Inc.	Evaluation Board

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Product Specifications For T2G6000528-Q3 RF Power Transistor

Part Number: T2G6000528-Q3 Manufacturer: Qorvo Product Description: RF Power Transistor, DC to 6 GHz, 10W, 13.5 dB, 28 V, GaN

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$105.01

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$75.35

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Description	Units Per Format	Available

Description	Units Per Format	Available

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T2G6000528-Q3

RF Power Transistor from Qorvo

RF Power Transistor, DC to 6 GHz, 10W, 13.5 dB, 28 V, GaN

Technical Inquiry Request for T2G6000528-Q3 RF Power Transistor

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T2G6000528-Q3

RF Power Transistor from Qorvo

RF Power Transistor, DC to 6 GHz, 10W, 13.5 dB, 28 V, GaN

Technical Inquiry Request for T2G6000528-Q3 RF Power Transistor

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