Status: Standard | Data Sheet: pdf link image   | RoHS Compliance: Rohs Compliant
The TriQuint T2G6003028-FL is a 30 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz. The device is constructed with TriQuint's proven 0.25 um process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

Features:
  • Frequency: DC to 6 GHz
  • Output power (P3dB): 30 W at 6 GHz
  • Linear gain: >14 dB at 6 GHz
  • Operating voltage: 28 V
  • Low thermal resistance package
  • Part Number:
    T2G6003028-FL
    Manufacturer:
    Qorvo
    Frequency Min:
    0 GHz
    Frequency Max:
    6 GHz
    Output Power:
    30 W
    Gain:
    14 dB
    % Typ Efficiency:
    72.4
    Supply Voltage:
    28 V
    Id:
    1700 mA
    Package:
    Flange
    Process:
    GaN
    Type:
    RF Power Discrete Transistors

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    Product Specifications For T2G6003028-FL RF Power Transistor
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    Availability
    In Stock
    622
    On Order
    400
    by 9/10/2025

    400
    by 10/31/2025

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