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TGF2023-2-01

Model Number: TGF2023-2-01

RF Power Transistor from Qorvo

RF Power Transistor, 0 to 18 GHz, 6 W, 18 dB, 28 V, GaN, 0.82 X 0.66 X 0.10 mm

Status: No new designs | Data Sheet:

| RoHS Compliance: Rohs Compliant

The TriQuint TGF2023-2-01 is a discrete 1.25 mm GaN on SiCHEMT which operates from DC to 18 GHz. The part is designed using TriQuint's proven 0.25 um GaN production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. The device typically provides 38 dBm of saturated output power with power gain of 18 dB at 3 GHz. The maximum power added efficiency is 66% which makes the TGF2023-2-01 appropriate for high efficiency applications. The part is lead-free and RoHS compliant.

Features:

Frequency range: DC to 18 GHz

38 dBm nominal Psat at 3 GHz

66% maximum PAE

18 dB nominal power gain at 3 GHz

Bias: Vd = 28 -32 V, Idq = 125 mA, Vg = -3.6 V typical

Technology: 0.25 um Power GaN on SiC

Chip dimensions: 0.82 x 0.66 x 0.10 mm

Part Number: TGF2023-2-01
Manufacturer: Qorvo
Frequency Min: 0 GHz
Frequency Max: 18 GHz
Output Power: 6 W
Gain: 18 dB
% Typ Efficiency: 66
Supply Voltage: 28 V
Id: 125 mA
Package: DIE
Process: GaN
Type: RF Power Die

No Content Available

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Complementary Product	TGF2023-2-02 Qorvo	RF Power Transistor, 0 to 18 GHz, 12 W, 12.3 dB, 28 V, GaN, 0.82 X 0.92 X 0.10 mm
Complementary Product	TGF2023-2-05 Qorvo	RF Power Transistor, 0 to 18 GHz, 25 W, 11.9 dB, 28 V, GaN, 0.82 X 1.44 X 0.10 mm
Complementary Product	TGF2023-2-10 Qorvo	RF Power Transistor, 0 to 18 GHz, 50 W, 11.5 dB, 28 V, DIE, GaN
Complementary Product	TGF2023-2-20 Qorvo	RF Power Transistor, 0 to 18 GHz, 90 W, 11.1 dB, 28 V, GaN

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Product Specifications For TGF2023-2-01 RF Power Transistor

Part Number: TGF2023-2-01 Manufacturer: Qorvo Product Description: RF Power Transistor, 0 to 18 GHz, 6 W, 18 dB, 28 V, GaN, 0.82 X 0.66 X 0.10 mm

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TGF2023-2-01

RF Power Transistor from Qorvo

RF Power Transistor, 0 to 18 GHz, 6 W, 18 dB, 28 V, GaN, 0.82 X 0.66 X 0.10 mm

Technical Inquiry Request for TGF2023-2-01 RF Power Transistor

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TGF2023-2-01

RF Power Transistor from Qorvo

RF Power Transistor, 0 to 18 GHz, 6 W, 18 dB, 28 V, GaN, 0.82 X 0.66 X 0.10 mm

Technical Inquiry Request for TGF2023-2-01 RF Power Transistor

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