RFMW

Status: Standard | Data Sheet: pdf link image   | RoHS Compliance: Rohs Compliant
The TriQuint TGF2023-2-10 is a discrete 10 mm GaN on SiCHEMT which operates from DC to 18 GHz. The part is designed using TriQuint's proven 0.25um GaN production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. The device typically provides 46.7 dBm of saturated output power with power gain of 17.8 dB at 3 GHz. The maximum power added efficiency is 55% which makes the TGF2023-2-10 appropriate for high efficiency applications. The part is lead-free and RoHS compliant.

Features:
  • Frequency range: DC to 18 GHz
  • 46.7 dBm nominal Psat at 3 GHz
  • 55% maximum PAE
  • 17.5 dB nominal power gain
  • Bias: Vd = 28 to 32 V, Idq = 1 A, Vg = -3.6 V typical
  • Technology: 0.25 um Power GaN on SiC
  • Chip dimensions: 0.82 x 2.48 x 0.10 mm
    • Part Number:
    TGF2023-2-10
    Manufacturer:
    Qorvo
    Export Status:
    Frequency Min:
    0 GHz
    Frequency Max:
    18 GHz
    Output Power:
    50 W
    Gain:
    11.5 dB
    % Typ Efficiency:
    53
    Supply Voltage:
    28 V
    Id:
    1000 mA
    Package:
    DIE
    Process:
    GaN
    Type:
    RF Power Die
    Modelithics Simulation Model
    		 HMT-QOR-TGF2023-2-10-001

    Technical Inquiry Request for TGF2023-2-10 RF Power Transistor

    Fields marked with * are required.
    Product Specifications For TGF2023-2-10 RF Power Transistor
    Design Information
    Contact Information


    Availability
    In Stock
    50
    Need products sooner?
    Quantity 
    Pricing
    Quantity
    Price
    1 - 24
    $144.33
    25 - 99
    $97.87
    Request a Pricing Quote for greater quantities
    Product Notices
    No Current Notices