Part number TGF2819-FL Product Type RF Power Transistor from Manufacturer Qorvo

Status: Standard | Data Sheet: pdf link image   | RoHS Compliance:

The Qorvo TGF2819-FL is a greater-than 200 W Peak (40 W Avg.) (P3dB) discrete GaN on SiC HEMT which operates from DC to 4.0 GHz. The device is constructed with Qorvo's proven TQGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

Lead-free and ROHS compliant

Evaluation boards are available upon request.

Part Number:
TGF2819-FL
Manufacturer:
Qorvo
Export Status:
Frequency Min:
0 GHz
Frequency Max:
3.5 GHz
Output Power:
200 W
Gain:
14 dB
% Typ Efficiency:
58
Supply Voltage:
50 V
Id:
250 mA
Package:
Flange
Process:
GaN
Type:
RF Power Discrete Transistors
Modelithics Simulation Model
HMT-QOR-TGF2819-FL-001

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Product Specifications For TGF2819-FL RF Power Transistor
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