The Qorvo TGF2819-FL is a greater-than 200 W Peak (40 W Avg.) (P3dB) discrete GaN on SiC HEMT which operates from DC to 4.0 GHz. The device is constructed with Qorvo's proven TQGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.
Lead-free and ROHS compliant
Evaluation boards are available upon request.
Part Number:
TGF2819-FL
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Manufacturer:
Qorvo
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Export Status:
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Frequency Min:
0 GHz
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Frequency Max:
3.5 GHz
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Output Power:
200 W
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Gain:
14 dB
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% Typ Efficiency:
58
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Supply Voltage:
50 V
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Id:
250 mA
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Package:
Flange
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Process:
GaN
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Type:
RF Power Discrete Transistors
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Modelithics Simulation Model
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HMT-QOR-TGF2819-FL-001 HMT-QOR-TGF2819-FL-001 |
Description | Units Per Format | Available |
Description | Units Per Format | Available |