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TGF2819-FS

Model Number: TGF2819-FS

RF Power Transistor from Qorvo

RF Power Transistor, DC- 3.5 GHz, 100 W, 14 dB, 32 V, GaN

Status: No new designs | Data Sheet:

| RoHS Compliance:

The TriQuint TGF2819-FS is a greater than 100 W Peak (20 W Avg.) (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device is constructed with TriQuint's proven TQGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

Lead-free and ROHS compliant.

Part Number: TGF2819-FS
Manufacturer: Qorvo
Export Status:
Frequency Min: 0 GHz
Frequency Max: 3.5 GHz
Output Power: 100 W
Gain: 14 dB
% Typ Efficiency: 58
Supply Voltage: 32 V
Id: 250 mA
Package: Flangeless
Process: GaN
Type: RF Power Discrete Transistors

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Part Function	Part Number	Description
Evaluation Board	TGF2819-FS/FL EVAL BOARD Qorvo	Evaluation board for TGF2819-FS/FL, 3.1- 3.5 GHz
Complementary Product	200X02R0 XSYSTOR Inc.	GaN Controller Module, 80 V Max, 300 mA Drive Current, 60 nS Rise Time, -2.0 V Shutdown Voltage
Complementary Product	765EP2R0 XSYSTOR Inc.	Evaluation Board
Complementary Product	TGF2819-FL Qorvo	RF Power Transistor, DC- 3.5 GHz, 200 W, 14 dB, 50 V, GaN

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Product Specifications For TGF2819-FS RF Power Transistor

Part Number: TGF2819-FS Manufacturer: Qorvo Product Description: RF Power Transistor, DC- 3.5 GHz, 100 W, 14 dB, 32 V, GaN

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TGF2819-FS

RF Power Transistor from Qorvo

RF Power Transistor, DC- 3.5 GHz, 100 W, 14 dB, 32 V, GaN

Technical Inquiry Request for TGF2819-FS RF Power Transistor

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TGF2819-FS

RF Power Transistor from Qorvo

RF Power Transistor, DC- 3.5 GHz, 100 W, 14 dB, 32 V, GaN

Technical Inquiry Request for TGF2819-FS RF Power Transistor

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