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TGF2929-FL

Model Number: TGF2929-FL

RF Power Transistor from Qorvo

RF Power Transistor, DC to 3.5 GHz, 100 W, 14 dB, 28 V, GaN

Status: Standard | Data Sheet:

| RoHS Compliance: Rohs Compliant

Qorvo's TGF2929-FL is a 100 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 3.5 GHz and a 28V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations.

Lead-free and ROHS compliant. Evaluation boards are available upon request.

Part Number: TGF2929-FL
Manufacturer: Qorvo
Frequency Min: 0 GHz
Frequency Max: 3.5 GHz
Output Power: 100 W
Gain: 14 dB
% Typ Efficiency: 50
Supply Voltage: 28 V
Id: 260 mA
Package: Flanged
Process: GaN
Type: RF Power Discrete Transistors

Modelithics Simulation Model

HMT-QOR-TGF2929-FL-001

Part Function	Part Number	Description
Evaluation Board	TGF2929-FLEVB01 Qorvo	Evaluation Board for TGF2929-FS or -FL, 3.1 to 3.5 GHz
Complementary Product	200X02R0 XSYSTOR Inc.	GaN Controller Module, 80 V Max, 300 mA Drive Current, 60 nS Rise Time, -2.0 V Shutdown Voltage
Complementary Product	735E22R0 XSYSTOR Inc.	Evaluation Board, Controller, Switch
Complementary Product	TGF2929-FS Qorvo	RF Power Transistor, DC to 3.5 GHz, 100 W, 14 dB, 28 V, GaN, Flangeless

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Product Specifications For TGF2929-FL RF Power Transistor

Part Number: TGF2929-FL Manufacturer: Qorvo Product Description: RF Power Transistor, DC to 3.5 GHz, 100 W, 14 dB, 28 V, GaN

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$691.85

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$461.23

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Description	Units Per Format	Available

Description	Units Per Format	Available

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TGF2929-FL

RF Power Transistor from Qorvo

RF Power Transistor, DC to 3.5 GHz, 100 W, 14 dB, 28 V, GaN

Technical Inquiry Request for TGF2929-FL RF Power Transistor

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TGF2929-FL

RF Power Transistor from Qorvo

RF Power Transistor, DC to 3.5 GHz, 100 W, 14 dB, 28 V, GaN

Technical Inquiry Request for TGF2929-FL RF Power Transistor

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