The Qorvo TGF2933 is a 7 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 25 GHz and 28 V supply. The device is constructed with Qorvo's proven QGaN15 process. The device can support pulsed, CW, and linear operations.
Lead-free and ROHS compliant.
Part Number:
TGF2933
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Manufacturer:
Qorvo
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Frequency Min:
1 GHz
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Frequency Max:
25 GHz
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Output Power:
7 W
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Gain:
15 dB
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% Typ Efficiency:
57
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Supply Voltage:
28 V
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Package:
DIE
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Process:
GaN
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Type:
RF Power Discrete Transistors
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Description | Units Per Format | Available |
Description | Units Per Format | Available |