Part number TGF2977-SM Product Type RF Power Transistor from Manufacturer Qorvo

Status: Standard | Data Sheet: pdf link image   | RoHS Compliance: Rohs Compliant

The Qorvo TGF2977-SM is a 6 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 12 GHz. The device is constructed with the proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

The device is housed in an industry-standard 3 x 3 mm surface mount QFN package.

Lead-free and ROHS compliant.

Download this white paper developed by designers at Plextek RFI in the UK demonstrating the excellent performance of a single stage power amplifier based on the TGF2977-SM operating in X-band at 9.3 to 9.5GHz.

Part Number:
TGF2977-SM
Manufacturer:
Qorvo
Frequency Min:
0 GHz
Frequency Max:
12 GHz
Output Power:
5 W
Gain:
13 dB
% Typ Efficiency:
50
Supply Voltage:
32 V
Package:
QFN 3x3mm
Process:
GaN HEMT
Type:
RF Power Discrete Transistors
Modelithics Simulation Model
HMT-QOR-TGF2977-SM-001

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Product Specifications For TGF2977-SM RF Power Transistor
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by 9/8/2025

210
by 9/10/2025

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