Part number TGF2978-SM Product Type RF Power Transistor from Manufacturer Qorvo

Status: Standard | Data Sheet: pdf link image   | RoHS Compliance: Rohs Compliant

Qorvo's TGF2978-SM is a 20 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 12 GHz.   The device is constructed with their proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

The device is housed in an industry-standard 3 x 4 mm surface mount QFN package.

Lead-free and ROHS compliant

Part Number:
TGF2978-SM
Manufacturer:
Qorvo
Export Status:
Frequency Min:
0 GHz
Frequency Max:
12 GHz
Output Power:
20 W
Gain:
11 dB
% Typ Efficiency:
46
Supply Voltage:
32 V
Package:
QFN 3x4mm
Process:
GaN HEMT
Type:
RF Power Discrete Transistors
Modelithics Simulation Model
HMT-QOR-TGF2978-SM-001

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