Qorvo's TGF2978-SM is a 20 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 12 GHz. The device is constructed with their proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.
The device is housed in an industry-standard 3 x 4 mm surface mount QFN package.
Lead-free and ROHS compliant
Part Number:
TGF2978-SM
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Manufacturer:
Qorvo
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Export Status:
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Frequency Min:
0 GHz
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Frequency Max:
12 GHz
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Output Power:
20 W
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Gain:
11 dB
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% Typ Efficiency:
46
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Supply Voltage:
32 V
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Package:
QFN 3x4mm
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Process:
GaN HEMT
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Type:
RF Power Discrete Transistors
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Modelithics Simulation Model
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HMT-QOR-TGF2978-SM-001 HMT-QOR-TGF2978-SM-001 |
Description | Units Per Format | Available |
Description | Units Per Format | Available |