RFMW
NXP Wideband Transistors
QUBiC4 SI and SiGe:C Transistors for any RF Function
NXP's next generation RF transistors offer industry leading RF noise figure versus gain performance while drawing the lowest current. This performance allows for better signal reception at low power and enables robust operation for RF receivers in noisy environments. With over 20 years of success in the fabrication of silicon based NPN transistors, NXP has an excellent reputation for high quality and superior performance. Application experts are extremely flexible in supporting customers with applicaiton specific requirements.


Key Features:

  • 40/110 GHz transition frequency allows for applications up to 18 GHz and beyond
  • High gain of 13.5 dB at 12 GHz with a low noise figure of 1.45 dB
  • High linearity of 34 dBm (OIP3) at 1.8 GHz
  • Consuming only 3 mA to generate 13.5 dB gain at 12 GHz
  • Plastic surface-mount SOT343F package for high performance and easy manufacturing

Key Applications:

  • 2nd and 3rd LNA stage and mixer stage in DBS LNBs, Ka/Ku band DROs
  • Satellite radio (SDARS) LNA, C-band/ X-band high output buffer amplifiers
  • High linearity applications
  • Low current battery equipped applications
  • LNA for microwave communications systems
  • Medium output power applications, microwave driver/buffer applications, and more

The devices in this family of 6th (Si) and 7th (SiGe:C) generation RF transistors can be used to perform nearly any RF function. For example, the BFUx10F, BFUx30F, BFU725/N1 can be used as low noise amplifiers, while the BFUx60F and BFUx90F can be used as high linearity and high output amplifiers. 6th generation transistors support products designed for 5V and above while 7th generation transistors are designed for 2.8V battery operated applications, where power consumption is important. Other options include using these transistors as buffer amplifiers, mixers, and oscillators.

Higher transition frequencies (40 to 110 GHz) enable higher application frequencies (24/77 GHz car radar, 18 GHz Ka band, 3.5-3.7 WiMas, etc.), and the devices meet the low current requirements of wideband applications.

As a result, these devices are ideal for use in a very wide range of applications: 2nd and 3rd LNA stage and mixer stage in DBS LNBs, Ka/Ku band DROs, satellite radio (SDARS) LNA, C-band/X-band high output buffer amplifiers, AMR, WLAN/WiFi, ZigBee, Bluetooth, FM radio, GPS, cellular (LTE, UMTS), mobile TV, RKE, high linearity applications, low current battery equipped applications, low noise amplifiers for microwave communications systems, medium output power applications, microwave driver/buffer applications, and more.


Look below for the NXP transistor that best fits your application. Full data sheets are located on the RFMW linked product pages. Samples and Kits are available from your local RFMW Sales Engineer.

Part

fT [typ] VCEO [max] IC [max] Ptot [max] Polarity Freq NF @IC @VCE IP3 [typ] @IC @VCE
Number Package Generation (GHz) (V) (mA) (mW) Polarity Freq (dB) (mA) (V) (dBm) (ma) (V)
BFU610F SOT3434F 6th 15 5.5 10 136 NPN 5.8 1.7 2 2 18 10 1.5
BFU630F SOT3434F 6th 21 5.5 30 200 NPN 5.8 1.7 3 2 27.5 30 2.5
BFU660F SOT3434F 6th 21 5.5 60 225 NPN 5.8 1.3 6 2 28 40 4
BFU690F SOT3434F 6th 18 5.5 100 230 NPN 2.4 0.7 15 2 33 70 4
BFU710F SOT3434F 7th 43 2.8 10 136 NPN 5.8 1.45 2 2 19.5 10 1.5
BFU725F/N1 SOT3434F 7th 55 2.8 40 136 NPN 5.8 1.1 5 2 19 25 2
BFU730F SOT3434F 7th 55 2.8 30 197 NPN 5.8 1.3 5 2 29 20 2.5
BFU760F SOT3434F 7th 45 2.8 70 220 NPN 5.8 0.5 12 2 33 30 2.5
BFU790F SOT3434F 7th 25 2.8 100 234 NPN 2.4 0.5 20 2 34 30 2.5

NXP Wideband Transistors for any RF use