RFMW
Part number CLL3H0914LS-700U Product Type RF Power Transistor from Manufacturer Ampleon

Status: Standard | Data Sheet: pdf link image   | RoHS Compliance: Rohs Compliant

L-band internally pre-matched GaN-SiC HEMT


The CLL3H0914L-700 and CLL3H0914LS-700 are 700 W internally pre-matched RF GaN-SiC HEMTs power transistors that are usable in the frequency range from 0.9 GHz to 1.4 GHz. The devices offer excellent efficiency, thermal resistance and ruggedness suitable for short- and long-pulse applications. 

Features and benefits


700 W internally pre-matched GaN-SiC HEMT with frequency range from 0.9 GHz to 1.4 GHz with internal stability network

Low thermal resistance

Excellent ruggedness

High efficiency, short pulse reference designs at 960 MHz to 1215 MHz and 1030 MHz for avionics applications

High efficiency, long pulse reference designs at 1.2 GHz to 1.4 GHz

Part Number:
CLL3H0914LS-700U
Manufacturer:
Ampleon
Frequency Min:
0.9 GHz
Frequency Max:
1.4 GHz
Output Power:
750 W
Gain:
17 dB
% Typ Efficiency:
65
Supply Voltage:
50 V
Process:
GaN
Type:
RF Power Discrete Transistors
No Content Available

Technical Inquiry Request for CLL3H0914LS-700U RF Power Transistor

Fields marked with * are required.
Product Specifications For CLL3H0914LS-700U RF Power Transistor
Design Information
Contact Information


Availability
In Stock
132
Need products sooner?
Quantity 
Pricing
Quantity
Price
1 - 9
$789.59
10 - 24
$767.65
Request a Pricing Quote for greater quantities
Product Notices
No Current Notices