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QJSB024SB3

SiC FET Module from Powerex Inc.

Single SiC MOSFET

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The Powerex QJSB024SB3 High Voltage Silicon Carbide MOSFET Module is a 10 kV, 240A single SiC MOSFET featuring an ultra-low 25 mΩ RDS(on) for reduced conduction losses and high efficiency in demanding power conversion systems. The low profile package incorporates 13 nH stray inductance, low gate loop inductance, 20 kV isolation, aluminum nitride insulation, and a 175°C maximum junction temperature to support high frequency switching, simplified thermal management, and reliable operation in grid-tied solar inverters, medium voltage motor drives, data center power distribution, and railway applications.

Part Number: QJSB024SB3
Manufacturer: Powerex Inc.
Voltage: 10000 V
Rds(on): 25 mΩ
Current: 240 A
Configuration: SiC MOSFET
Topology: Single SiC MOSFET Module
Generation: Gen 3
Tj Max: 175 °C
Dimensions: 130mm x 140mm mm

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Product Specifications For QJSB024SB3 SiC FET Module

Part Number: QJSB024SB3 Manufacturer: Powerex Inc. Product Description: Single SiC MOSFET

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QJSB024SB3

SiC FET Module from Powerex Inc.

Single SiC MOSFET

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QJSB024SB3

SiC FET Module from Powerex Inc.

Single SiC MOSFET

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